Features: ·High speed switching·Low on-resistance·No secondary breadown·Low driving power·Avalanche-proofApplicationfor SwitchingSpecifications Item Symbol Ratings Unit Remarks Drain-source voltage VDS 150 V VDSX 120 V VGS=30V Continuous drain current ...
2SK3474-01: Features: ·High speed switching·Low on-resistance·No secondary breadown·Low driving power·Avalanche-proofApplicationfor SwitchingSpecifications Item Symbol Ratings Unit Remarks Dra...
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·High speed switching
·Low on-resistance
·No secondary breadown
·Low driving power
·Avalanche-proof
Item |
Symbol |
Ratings |
Unit |
Remarks |
Drain-source voltage |
VDS |
150 |
V |
|
VDSX |
120 |
V |
VGS=30V | |
Continuous drain current |
ID |
±33 |
A |
|
±4.1 *4 |
A |
Ta=25°C | ||
Pulsed drain current |
D(puls] |
±132 |
A |
|
Gate-source voltage |
VGS |
±30 |
V |
|
Repetitive or non-repetitive |
IAS *2 |
33 |
A |
|
Maximum Avalanche Energy |
EAS *1 |
169 |
mJ |
|
Maximum Drain-Source dV/dt |
dVDS/dt |
20 |
kV/s |
VDS150V |
Peak Diode Recovery dV/dt |
dV/dt *3 |
5 |
kV/s |
|
Max. power dissipation |
PD
|
2.4 *4 |
W |
Ta=25°C |
195 |
W |
|||
Operating and storage |
Tch |
+150 |
°C |
|
temperature range |
Tstg |
-55 to +150 |
°C |
*1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph
*2 Tch 150°C
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)