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2SK3467

Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A)• Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecifications PARAMETER...

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SeekIC No. : 004226704 Detail

2SK3467: Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A)• Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)•...

2SK3467 Data Sheet

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Part Number:
2SK3467
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• 4.5 V drive available
• Low on-state resistance
   RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
   QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
20
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)(TC = 25°C)
ID(DC)
±80
A
Drain peak current(Pulse)1
ID(pulse)
±320
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
76
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Note 1 PW 10 s, Duty Cycle 1%


Description

The 2SK3467 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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