Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A)• Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecifications PARAMETER...
2SK3467: Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A)• Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)•...
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PARAMETER |
SYMBOL |
RATING |
UNIT |
Drain to source voltage (VGS = 0 V) |
VDSS |
20 |
V |
Gate to source voltage(VDS = 0 V) |
VGSS |
±20 |
V |
Drain current(DC)(TC = 25°C) |
ID(DC) |
±80 |
A |
Drain peak current(Pulse)1 |
ID(pulse) |
±320 |
A |
Total Power Dissipation (TA = 25°C) |
PT1 |
1.5 |
W |
Total Power Dissipation (TC = 25°C) |
PT2 |
76 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
-55to+150 |
The 2SK3467 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.