2SK3458 Selling Leads, Price trend, 2SK3458 DataSheet download, circuit diagram from SeekIC.com

Features: • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)• Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A)• Avalanche capability ratings• Surface mount package availableSpecifications PARAM...

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SeekIC No. : 004226703 Detail

2SK3458: Features: • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)• Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A)&#...

2SK3458 Data Sheet

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Part Number:: 2SK3458
Supply Ability:: 5000

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Upload time: 2024/12/26

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Product Details

Description

Features:

• Low gate charge
Q_G = 25 nC TYP. (V_DD = 450 V, V_GS = 10 V, I_D = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
R_DS(on) = 2.2 MAX. (V_GS = 10 V, I_D = 3.0 A)
• Avalanche capability ratings
• Surface mount package available

Specifications

PARAMETER	SYMBOL	RATING	UNIT
Drain to source voltage (V_GS = 0 V)	V_DSS	800	V
Gate to source voltage(V_DS = 0 V)	V_GSS	±30	V
Drain current(DC)(T_C = 25°C)	I_D(DC)	±6.0	A
Drain peak current(Pulse)¹	I_D(pulse)	±24	A
Total Power Dissipation (T_A = 25°C)	P_T1	1.5	W
Total Power Dissipation (T_C = 25°C)	P_T2	100	W
Channel temperature	T_ch	150
Storage temperature	T_stg	-55to+150
Single Avalanche Current²	I_AS	6.0	A
Single Avalanche Energy ²	E_AS	66.5	mJ

Notes 1. PW 10 s, Duty Cycle 1%
2. Starting T_ch = 25°C, V_DD = 150 V, RG = 25 , V_GS = 20 0V

Description

The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power supply.

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2SK3458

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