Features: • Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)• Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6.0 A)• Avalanche capability ratings• Surface mount package availableSpecificationsDrain ...
2SK3456: Features: • Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)• Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6...
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Drain to Source Voltage (VGS = 0 V) VDSS 500 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±12 A
Drain Current (Pulse) Note1 ID(pulse) ±36 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 100 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 12 A
Single Avalanche Energy Note2 EAS 103 mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.