Features: ` Low drain-source ON resistance: RDS (ON) = 15 m (typ.)` High forward transfer admittance: Yfs= 28 S (typ.)` Low leakage current: IDSS = 100 A (VDS = 100 V)` Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Description Characteristics Symbol Rating Unit Drain-source v...
2SK3442: Features: ` Low drain-source ON resistance: RDS (ON) = 15 m (typ.)` High forward transfer admittance: Yfs= 28 S (typ.)` Low leakage current: IDSS = 100 A (VDS = 100 V)` Enhancement-mode: Vth = 2.0~4...
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` Low drain-source ON resistance: RDS (ON) = 15 m (typ.)
` High forward transfer admittance: Yfs = 28 S (typ.)
` Low leakage current: IDSS = 100 A (VDS = 100 V)
` Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Characteristics | Symbol | Rating | Unit | |
Drain-source voltage | VDSS | 100 | V | |
Drain-gate voltage (RGS =20 k) | VDGR | 100 | V | |
Gate-source voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 45 | A |
Pulse (Note 1) |
IDP | 180 | ||
Drain power dissipation (Tc = 25°C) | PD | 125 | W | |
Single pulse avalanche energy (Note 2) |
EAS | 468 | mJ | |
Avalanche current | IAR | 45 | A | |
Repetitive avalanche energy (Note 3) | EAR | 12.5 | mJ | |
Channel temperature | Tch | 150 | ||
Storage temperature range | Tstg | -55~150 |