Position: Home  > All Categories> Integrated Circuits (ICs) > 2SK3435

2SK3435

Features: ` Super low on-state resistance: - RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 40 A) - RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 40 A)` Low Ciss: Ciss = 3200 pF TYP.` Built-in gate protection diodeSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V ...

product image

2SK3435 Picture
See larger image
SeekIC No. : 004226697 Detail

2SK3435: Features: ` Super low on-state resistance: - RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 40 A) - RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 40 A)` Low Ciss: Ciss = 3200 pF TYP.` Built-in gate protection dio...

2SK3435 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SK3435
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Super low on-state resistance:
  - RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 40 A)
  - RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 40 A)
` Low Ciss: Ciss = 3200 pF TYP.
` Built-in gate protection diode


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±80 A
Drain Current (Pulse) Note1 ID(pulse) ±320 A
Total Power Dissipation (TC = 25°C) PT 84 W
Total Power Dissipation (TA= 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 31 A
Single Avalanche Energy Note2 EAS 96 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Integrated Circuits (ICs)
TA8435H
1MB12-140
RF and RFID
X3C26P1-30S
1P620S
View more