Features: ` Super low on-state resistance: - RDS(on)1 = 4.0 m MAX. (VGS = 10 V, ID = 42 A) - RDS(on)2 = 6.9 m MAX. (VGS = 4 V, ID = 42 A)` Low Ciss: Ciss = 9500 pF TYP.` Built-in gate protection diodeSpecifications Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGSS ±20 V ...
2SK3432: Features: ` Super low on-state resistance: - RDS(on)1 = 4.0 m MAX. (VGS = 10 V, ID = 42 A) - RDS(on)2 = 6.9 m MAX. (VGS = 4 V, ID = 42 A)` Low Ciss: Ciss = 9500 pF TYP.` Built-in gate protection dio...
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Drain to Source Voltage | VDSS | 40 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current (DC) | ID(DC) | ±83 | A |
Drain Current (Pulse) Note1 | ID(pulse) | ±332 | A |
Total Power Dissipation (TC = 25°C) | PT | 100 | W |
Total Power Dissipation (TA= 25°C) | PT | 1.5 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Single Avalanche Current Note2 | IAS | 69 | A |
Single Avalanche Energy Note2 | EAS | 476 | mJ |
Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V