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2SK3424

Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A)• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecificationsDrain to ...

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SeekIC No. : 004226689 Detail

2SK3424: Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A)• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V...

2SK3424 Data Sheet

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Part Number:
2SK3424
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.5 V drive available
• Low on-state resistance RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS ........................30 V
Gate to Source Voltage (VDS = 0 V) VGSS ......................±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ........................±48 A
Drain Current (Pulse) Note ID(pulse) .......................... ±192 A
Total Power Dissipation (TA = 25°C) PT1....................... 1.5 W
Total Power Dissipation (TC = 25°C) PT2 ........................50 W
Channel Temperature Tch ............................................150 °C
Storage Temperature Tstg .............................−55 to +150 °C
Note PW 10 µs, Duty Cycle 1%


Description

The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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