Features: • 4.5-V drive available• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecifications Drain to So...
2SK3405: Features: • 4.5-V drive available• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)•...
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• 4.5-V drive available
• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
Drain to Source Voltage (VGS = 0 V) | VDSS | 20 | V |
Gate to Source Voltage (VDS = 0 V) | VGSS | ±20 | V |
Drain Current (DC) (TC = 25°C) | ID(DC) |
±48 | A |
Drain Current (Pulse)Note |
ID(pulse) | ±192 | A |
Total Power Dissipation (TA = 25) |
PT1 | 1.5 | W |
Total Power Dissipation (TC= 25) | PT2 | 50 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55 to +150 |
The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.