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2SK3405

Features: • 4.5-V drive available• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecifications Drain to So...

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SeekIC No. : 004226683 Detail

2SK3405: Features: • 4.5-V drive available• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)•...

2SK3405 Data Sheet

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Part Number:
2SK3405
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.5-V drive available
• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available




Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C)
ID(DC)		 ±48 A

Drain Current (Pulse)Note

 ID(pulse) ±192 A

Total Power Dissipation (TA = 25)

 PT1 1.5 W
Total Power Dissipation (TC= 25) PT2 50 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +150



Description

The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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