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2SK3404

Features: • 4.5-V drive available• Low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 20 A)• Low gate charge QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecificationsDrain to So...

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SeekIC No. : 004226682 Detail

2SK3404: Features: • 4.5-V drive available• Low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 20 A)• Low gate charge QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V)&...

2SK3404 Data Sheet

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Part Number:
2SK3404
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.5-V drive available
• Low on-state resistance
   RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 20 A)
• Low gate charge
   QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available


Specifications

Drain to Source Voltage (VGS = 0 V)               VDSS                30          V
Gate to Source Voltage (VDS = 0 V)                VGSS             ±20          V
Drain Current (DC) (TC = 25°C)                     ID(DC)          ±40           A
Drain Current (Pulse) Note                              ID(pulse)    ±160            A
Total Power Dissipation (TA = 25°C)             PT1              1.5             W
Total Power Dissipation (TC = 25°C)             PT2 4             0              W
Channel Temperature                                     Tch                 150        °C
Storage Temperature                                      Tstg      −55 to +150    °C


Description

The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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