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2SK3402

Features: • Low On-State Resistance R DS(on)1 = 15 m MAX. (VGS = 10 V, ID = 18 A) R DS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18 A)• Low Ciss : Ciss = 3200 pF TYP.• Built-in Gate Protection Diode• TO-251/TO-252 packageSpecifications Drain to Source Voltage (VGS = 0 V) ...

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SeekIC No. : 004226681 Detail

2SK3402: Features: • Low On-State Resistance R DS(on)1 = 15 m MAX. (VGS = 10 V, ID = 18 A) R DS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18 A)• Low Ciss : Ciss = 3200 pF TYP.• Built-in Gate Prot...

2SK3402 Data Sheet

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Part Number:
2SK3402
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-State Resistance
     R DS(on)1 = 15 m MAX. (VGS = 10 V, ID = 18 A)
     R DS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18 A)
• Low Ciss : Ciss = 3200 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package


Specifications

Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
I D(DC)
±36
A
Drain Current (pulse) Note1
I D(pulse)
±144
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current Note2
IAS
35
A
Single Avalanche Energy Note2
EAS
123
mJ
Notes 1. PW 10 s, Duty cycle 1%
          2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V


Description

The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications


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