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2SK3386

Features: Low On-state Resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2= 36 m MAX. (VGS =4.0 V, ID =17 A) Low Ciss : Ciss = 2100 pF TYP. Built-in Gate Protection Diode TO-251/TO-252 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ...

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SeekIC No. : 004226678 Detail

2SK3386: Features: Low On-state Resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2= 36 m MAX. (VGS =4.0 V, ID =17 A) Low Ciss : Ciss = 2100 pF TYP. Built-in Gate Protection Diode TO-251/TO-252...

2SK3386 Data Sheet

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Part Number:
2SK3386
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low On-state Resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17 A)  RDS(on)2 = 36 m MAX. (VGS =4.0 V, ID =17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
 




Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC)
ID(DC)		 ±34 A

Drain Current (Pulse)Note1

ID(pulse) ±120 A

Total Power Dissipation (TC = 25)

 PT 40 W
Total Power Dissipation (TA= 25) PT 1.0 W
Channel Temperature Tch 150
Storage Temperature Tstg ±55 to +150
Single Avalanche Current Note2 IAS 28 A
Single Avalanche Energy Note2 EAS 78 mJ



Description

The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications.




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