2SK3380

Features: · Low on-resistanceRDS =1.26 W typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 W typ. (VGS = 4 V , ID = 50 mA)· 4 V gate drive device.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain cur...

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SeekIC No. : 004226676 Detail

2SK3380: Features: · Low on-resistanceRDS =1.26 W typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 W typ. (VGS = 4 V , ID = 50 mA)· 4 V gate drive device.Specifications Item Symbol Ratings Unit D...

floor Price/Ceiling Price

Part Number:
2SK3380
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

·  Low on-resistance
     RDS =1.26 W typ. (VGS = 10 V , ID = 150 mA)
     RDS = 2.8 W typ. (VGS = 4 V , ID = 50 mA)
·  4 V gate drive device.



Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
300
mA
Drain current peak
ID (pulse) Note1

1.2

A
Body-drain diode reverse drain current
IDR
300
mA
Channel dissipation
Pch
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Note: 1. PW 10 ms, duty cycle 1%


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