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2SK3377

Features: Low On-state Resistance RDS(on)1= 44 m MAX. (VGS = 10 V, ID = 10 A) RDS (on)2 = 78 m MAX. (VGS = 4.0 V, ID= 10 A) Low Ciss : Css = 760 pF TYP. Built-in Gate Protection DiodeTO-251/TO-252 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±2...

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SeekIC No. : 004226675 Detail

2SK3377: Features: Low On-state Resistance RDS(on)1= 44 m MAX. (VGS = 10 V, ID = 10 A) RDS (on)2 = 78 m MAX. (VGS = 4.0 V, ID= 10 A) Low Ciss : Css = 760 pF TYP. Built-in Gate Protection DiodeTO-251/TO-252 p...

2SK3377 Data Sheet

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Part Number:
2SK3377
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low On-state Resistance RDS(on)1= 44 m MAX. (VGS = 10 V, ID = 10 A) RDS (on)2  = 78 m MAX. (V GS = 4.0 V, ID= 10 A)
Low Ciss : Css  = 760 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package




Specifications

Drain to Source Voltage
VDSS 60 V
Gate to Source Voltage
VGSS ±20 V
Drain Current (DC)
ID(DC)		 ±20 A

Drain Current (Pulse)Note1

ID(pulse) ±50 A
Total Power Dissipation (TC = 25)
 PT 30 W

Total Power Dissipation (TA= 25)		 PT 1.0 W
Channel Temperature
Tch		 150  
Storage Temperature Tstg ±55 to +150  

Single Avalanche CurrentNote2
IAS		 15 A

Single Avalanche EnergyNote2
EAS		 23 mJ



Description

The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications.




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