Specifications Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW Junction Temperature Tj 125 °C Storage temperature range Tstg −55~125 ...
2SK3376TK: Specifications Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW...
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Characteristic |
Symbol |
Rating |
Unit |
Gate-Drain voltage |
VGDO |
-20 |
V |
Gate Current |
IG |
10 |
mA |
Drain power dissipation (Ta = 25°C) |
PD |
100 |
mW |
Junction Temperature |
Tj |
125 |
°C |
Storage temperature range |
Tstg |
−55~125 |
°C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).