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2SK3366

Features: ` Low on-resistance RDS(on)1 = 21 m (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 m (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 730 pF (TYP.)` Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT ...

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SeekIC No. : 004226671 Detail

2SK3366: Features: ` Low on-resistance RDS(on)1 = 21 m (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 m (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 730 pF...

2SK3366 Data Sheet

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Part Number:
2SK3366
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Description



Features:

` Low on-resistance
    RDS(on)1 = 21 m (MAX.) (VGS = 10 V, ID = 10 A)
    RDS(on)2 = 33 m (MAX.) (VGS = 4.5 V, ID = 10 A)
    RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A)
` Low Ciss : Ciss = 730 pF (TYP.)
` Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
30
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)
ID(DC)
±20
A
Drain peak current(Pulse)1
ID(pulse)
±80
A
Total Power Dissipation (TC = 25°C)
PT
30
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Note 1 PW  10 s, Duty cycle  1 %


Description

The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers.




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