2SK3366 Selling Leads, Price trend, 2SK3366 DataSheet download, circuit diagram from SeekIC.com

Features: ` Low on-resistance RDS(on)1 = 21 m (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 m (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 730 pF (TYP.)` Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT ...

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SeekIC No. : 004226671 Detail

2SK3366: Features: ` Low on-resistance RDS(on)1 = 21 m (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 m (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 730 pF...

2SK3366 Data Sheet

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Part Number:: 2SK3366
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/23

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Product Details

Description

Features:

` Low on-resistance
    R_DS(on)1 = 21 m (MAX.) (V_GS = 10 V, I_D = 10 A)
    R_DS(on)2 = 33 m (MAX.) (V_GS = 4.5 V, I_D = 10 A)
    R_DS(on)3 = 43 m (MAX.) (V_GS = 4.0 V, I_D = 10 A)
` Low C_iss : C_iss= 730 pF (TYP.)
` Built-in gate protection diode

Specifications

PARAMETER	SYMBOL	RATING	UNIT
Drain to source voltage (V_GS= 0 V)	V_DSS	30	V
Gate to source voltage(V_DS = 0 V)	V_GSS	±20	V
Drain current(DC)	I_D(DC)	±20	A
Drain peak current(Pulse)¹	I_D(pulse)	±80	A
Total Power Dissipation (T_C = 25°C)	P_T	30	W
Total Power Dissipation (T_A= 25°C)	P_T	1.0	W
Channel temperature	T_ch	150
Storage temperature	T_stg	-55to+150

Note 1 PW 10 s, Duty cycle 1 %

Description

The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers.

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2SK3366

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