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2SK3365

Features: ` Low on-resistance - RDS(on)1 = 14 m (MAX.) (VGS = 10 V, ID = 15 A) - RDS(on)2 = 21 m (MAX.) (VGS = 4.5 V, ID = 15 A) - RDS(on)3 = 29 m (MAX.) (VGS = 4.0 V, ID = 15 A)` Low Ciss : Ciss = 1300 pF (TYP.)` Built-in gate protection diodeSpecifications Drain to Source Voltage(VGS = 0 V)...

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SeekIC No. : 004226670 Detail

2SK3365: Features: ` Low on-resistance - RDS(on)1 = 14 m (MAX.) (VGS = 10 V, ID = 15 A) - RDS(on)2 = 21 m (MAX.) (VGS = 4.5 V, ID = 15 A) - RDS(on)3 = 29 m (MAX.) (VGS = 4.0 V, ID = 15 A)` Low Ciss : Ciss = ...

2SK3365 Data Sheet

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Part Number:
2SK3365
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low on-resistance
  - RDS(on)1 = 14 m (MAX.) (VGS = 10 V, ID = 15 A)
  - RDS(on)2 = 21 m (MAX.) (VGS = 4.5 V, ID = 15 A)
  - RDS(on)3 = 29 m (MAX.) (VGS = 4.0 V, ID = 15 A)
` Low Ciss : Ciss = 1300 pF (TYP.)
` Built-in gate protection diode


Specifications

Drain to Source Voltage(VGS = 0 V) VDSS 30 V
Gate to Source Voltage(VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±30 A
Drain Current (Pulse) Note ID(pulse) ±120 A
Total Power Dissipation(TA = 25°C) PT 36 W
Total Power Dissipation(TC = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C

Notes: PW 10 s, Duty cycle 1 %
        




Description

The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers.




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