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2SK3361

Features: ` Low on-state resistance - RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 20 A) - RDS(on)2 = 28 m MAX. (VGS = 4.5 V, ID = 20 A)` Low Ciss: Ciss = 4900 pF TYP.` Built-in gate protection diode` Isolated TO-220 packageSpecifications Drain to Source Voltage VDSS 100 V Gate to Source Volt...

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2SK3361: Features: ` Low on-state resistance - RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 20 A) - RDS(on)2 = 28 m MAX. (VGS = 4.5 V, ID = 20 A)` Low Ciss: Ciss = 4900 pF TYP.` Built-in gate protection diode` Iso...

2SK3361 Data Sheet

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Part Number:
2SK3361
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

` Low on-state resistance
  - RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 20 A)
  - RDS(on)2 = 28 m MAX. (VGS = 4.5 V, ID = 20 A)
` Low Ciss: Ciss = 4900 pF TYP.
` Built-in gate protection diode
` Isolated TO-220 package


Specifications

Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, 10  
Drain Current (DC) ID(DC) ±40 A
Drain Current (Pulse) Note1 ID(pulse) ±160 A
Total Power Dissipation (TA = 25°C) PT 35 W
Total Power Dissipation (TC = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 40 A
Single Avalanche Energy Note2 EAS 160 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application.


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