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2SK3359

Features: ` Low on-state resistance - RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 35 A) - RDS(on)2 = 28 m MAX. (VGS = 4.5 V, ID = 30 A)` Low Ciss: Ciss = 4900 pF TYP.` Built-in gate protection diodeSpecifications Drain to Source Voltage(VGS = 0 V) VDSS 100 V Gate to Source Voltage(VDS = 0 V)...

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2SK3359: Features: ` Low on-state resistance - RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 35 A) - RDS(on)2 = 28 m MAX. (VGS = 4.5 V, ID = 30 A)` Low Ciss: Ciss = 4900 pF TYP.` Built-in gate protection diodeSpeci...

2SK3359 Data Sheet

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Part Number:
2SK3359
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

` Low on-state resistance
  - RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 35 A)
  - RDS(on)2 = 28 m MAX. (VGS = 4.5 V, ID = 30 A)
` Low Ciss: Ciss = 4900 pF TYP.
` Built-in gate protection diode


Specifications

Drain to Source Voltage(VGS = 0 V) VDSS 100 V
Gate to Source Voltage(VDS = 0 V) VGSS(AC) ±20 V
Gate to Source Voltage(VDS = 0 V) VGSS(DC) +20, -10 V 
Drain Current (DC) ID(DC) ±70 A
Drain Current (Pulse) Note1 ID(pulse) ±280 A
Total Power Dissipation (TA = 25°C) PT 100 W
Total Power Dissipation (TC= 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 50 A
Single Avalanche Energy Note2 EAS 250 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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