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2SK3358

Features: ` Low on-state resistance - RDS(on)1 = 30 m MAX. (VGS = 10 V, ID = 28 A) - RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 20 A)` Low Ciss: Ciss = 3200 pF TYP.` Built-in gate protection diodeSpecifications Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS(AC) ±20 V ...

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2SK3358: Features: ` Low on-state resistance - RDS(on)1 = 30 m MAX. (VGS = 10 V, ID = 28 A) - RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 20 A)` Low Ciss: Ciss = 3200 pF TYP.` Built-in gate protection diodeSpeci...

2SK3358 Data Sheet

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Part Number:
2SK3358
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

` Low on-state resistance
  - RDS(on)1 = 30 m MAX. (VGS = 10 V, ID = 28 A)
  - RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 20 A)
` Low Ciss: Ciss = 3200 pF TYP.
` Built-in gate protection diode


Specifications

Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, 10  
Drain Current (DC) ID(DC) ±55 A
Drain Current (Pulse) Note1 ID(pulse) ±165 A
Total Power Dissipation (TA = 25°C) PT 100 W
Total Power Dissipation (TC = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 39 A
Single Avalanche Energy Note2 EAS 152 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3358 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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