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2SK3357

Features: ` Super low on-state resistance: - RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 38 A) - RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 38 A)` Low Ciss: Ciss = 9800 pF TYP.` Built-in gate protection diodeSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±2...

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2SK3357: Features: ` Super low on-state resistance: - RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 38 A) - RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 38 A)` Low Ciss: Ciss = 9800 pF TYP.` Built-in gate protection d...

2SK3357 Data Sheet

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Part Number:
2SK3357
Supply Ability:
5000

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Product Details

Description



Features:

` Super low on-state resistance:
  - RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 38 A)
  - RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 38 A)
` Low Ciss: Ciss = 9800 pF TYP.
` Built-in gate protection diode


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±75 A
Drain Current (Pulse) Note1 ID(pulse) ±300 A
Total Power Dissipation (TA = 25°C) PT 150 W
Total Power Dissipation (TC= 25°C) PT 3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 75 A
Single Avalanche Energy Note2 EAS 562 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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