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2SK3355

Features: ` Super low on-state resistance: RDS(on)1 = 5.8m MAX. (VGS = 10 V, ID = 42 A)RDS(on)2 = 8.8m MAX. (VGS = 4.0 V, ID = 42 A)` Low Ciss: Ciss = 9800 pF TYP.` Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage VDSS 60 ...

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SeekIC No. : 004226660 Detail

2SK3355: Features: ` Super low on-state resistance: RDS(on)1 = 5.8m MAX. (VGS = 10 V, ID = 42 A)RDS(on)2 = 8.8m MAX. (VGS = 4.0 V, ID = 42 A)` Low Ciss: Ciss = 9800 pF TYP.` Built-in gate protection diodeSpe...

2SK3355 Data Sheet

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Part Number:
2SK3355
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Super low on-state resistance:
    RDS(on)1 = 5.8m MAX. (VGS = 10 V, ID = 42 A)
    RDS(on)2 = 8.8m MAX. (VGS = 4.0 V, ID = 42 A)
` Low Ciss: Ciss = 9800 pF TYP.
` Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS(AC)
±20
V
Drain current(DC)
ID(DC)
±83
A
Drain peak current(Pulse)1
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel temperature
Tch
150150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 2
IAS
75
A
Single Avalanche Energy 2
EAS
562
mJ
Notes 1. PW 10 s, Duty cycle1 %
          2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V


Description

The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications


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