Features: `Low drain−source ON resistance : RDS (ON) = 0.8 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 250 V)`Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specifications Item Symbol Rating ...
2SK3342: Features: `Low drain−source ON resistance : RDS (ON) = 0.8 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 250 V)`Enhancement...
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Item |
Symbol |
Rating |
Unit | |
Drain−source voltage |
VDSS |
250 |
V | |
Drain−gate voltage (RGS = 20 k) |
VDGR |
250 |
V | |
Gate−source voltage |
VGSS |
±20 |
V | |
Drain current | DC (Note 1) |
ID |
4.5 |
A |
Pulse (Note 1) |
IDP |
18 |
A | |
Drain power dissipation (Tc = 25°C) |
PD |
20 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
51 |
mJ | |
Avalanche current |
IAR |
4.5 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
2.0 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
-55to+150 |
°C |