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2SK3326

Features: ` Low gate charge : - QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)` Gate voltage rating : ±30 V` Low on-state resistance : - RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A)` Avalanche capability ratings` Isolated TO-220(MP-45F) packageSpecifications Drain to Source Voltage(VGS...

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SeekIC No. : 004226649 Detail

2SK3326: Features: ` Low gate charge : - QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)` Gate voltage rating : ±30 V` Low on-state resistance : - RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A)` Avalanch...

2SK3326 Data Sheet

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Part Number:
2SK3326
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

` Low gate charge :
  - QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
` Gate voltage rating : ±30 V
` Low on-state resistance :
  - RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A)
` Avalanche capability ratings
` Isolated TO-220(MP-45F) package


Specifications

Drain to Source Voltage(VGS = 0 V) VDSS 500 V
Gate to Source Voltage(VDS = 0 V) VGSS(AC) ±30 V
Drain Current (DC) ID(DC) ±10 A
Drain Current (Pulse) Note1 ID(pulse) ±40 A
Total Power Dissipation (TA = 25°C) PT 40 W
Total Power Dissipation (TC = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 10 A
Single Avalanche Energy Note2 EAS 10.7 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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