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2SK3325

Features: · Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)· Gate voltage rating: ±30 V· Low on-state resistance RDS(on) = 0.85 W MAX. (VGS = 10 V, ID = 5.0 A)· Avalanche capability ratings· TO-220AB, TO-262, TO-263 packageSpecifications Drain to Source Voltage (VGS = 0 ...

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SeekIC No. : 004226648 Detail

2SK3325: Features: · Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)· Gate voltage rating: ±30 V· Low on-state resistance RDS(on) = 0.85 W MAX. (VGS = 10 V, ID = 5.0 A)· Avalanche capab...

2SK3325 Data Sheet

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Part Number:
2SK3325
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

· Low gate charge:
    QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
· Gate voltage rating: ±30 V
· Low on-state resistance
   RDS(on) = 0.85 W MAX. (VGS = 10 V, ID = 5.0 A)
· Avalanche capability ratings
· TO-220AB, TO-262, TO-263 package


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 500 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±10 A
Drain Current (Pulse) Note1 ID(pulse) ±40 A
Total Power Dissipation (TA = 25°C) PT 85 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Single Avalanche Current Note2 IAS 10 A
Single Avalanche Energy Note2 EAS 10.7 mJ



Description

The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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