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2SK3324

Features: ` Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating : ±30 V` Low on-state resistance : RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche capability ratingsSpecifications Drain to Source Voltage VDSS 900 V Gate to Source Voltage ...

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SeekIC No. : 004226647 Detail

2SK3324: Features: ` Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating : ±30 V` Low on-state resistance : RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche cap...

2SK3324 Data Sheet

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Part Number:
2SK3324
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

` Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
` Gate voltage rating : ±30 V
` Low on-state resistance : RDS(on) = 2.8  MAX. (VGS = 10 V, ID = 3.0 A)
` Avalanche capability ratings


Specifications

Drain to Source Voltage VDSS 900 V
Gate to Source Voltage VGSS(AC) ±30 V
Drain Current (DC) ID(DC) ±6 A
Drain Current (Pulse) Note1 ID(pulse) ±18 A
Total Power Dissipation (TC = 25°C) PT 120 W
Total Power Dissipation (TC = 25°C) PT 3.0 W
Storage Temperature Tstg 55 to + 150 °C
Single Avalanche Current Note2 IAS 6.0 A
Single Avalanche Energy Note2 EAS 21.6 mJ



Description

The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter.




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