Features: ` Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating : ±30 V` Low on-state resistance : RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche capability ratingsSpecifications Drain to Source Voltage VDSS 900 V Gate to Source Voltage ...
2SK3324: Features: ` Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating : ±30 V` Low on-state resistance : RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche cap...
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Drain to Source Voltage | VDSS | 900 | V |
Gate to Source Voltage | VGSS(AC) | ±30 | V |
Drain Current (DC) | ID(DC) | ±6 | A |
Drain Current (Pulse) Note1 | ID(pulse) | ±18 | A |
Total Power Dissipation (TC = 25°C) | PT | 120 | W |
Total Power Dissipation (TC = 25°C) | PT | 3.0 | W |
Storage Temperature | Tstg | 55 to + 150 | °C |
Single Avalanche Current Note2 | IAS | 6.0 | A |
Single Avalanche Energy Note2 | EAS | 21.6 | mJ |
The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter.