DescriptionThe 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.Descriptions of circuits, software, and other related information in this document are ...
2SK3305: DescriptionThe 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply...
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The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits,software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer.NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
Features of the 2SK3305 are:(1)low gate charge:QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A); (2)gate voltage rating: ±30 V; (3)low on-state resistance:RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A); (4)avalanche capability ratings. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
The absolute maximum ratings of the 2SK3305 can be summarized as:(1)drain to source voltage:500V;(2)storage temperature:-55 to +150;(3)channel temperature:150;(4)gate to source voltage:±30 V;(5)drain current:±5A;(6)total power dissipation:75W.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact an NEC sales representative in advance.