2SK3301

DescriptionThe 2SK3301 is a kind of TOSHIBA field effect transistor which is desiged for the high pseed, high voltage switching applications and switching regulator, DC to DC converter applications.Features of 2SK3301 are:(1)low drain-source ON resistance: RDS(ON) is 15 ohms typ; (2)high forward t...

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SeekIC No. : 004226639 Detail

2SK3301: DescriptionThe 2SK3301 is a kind of TOSHIBA field effect transistor which is desiged for the high pseed, high voltage switching applications and switching regulator, DC to DC converter applications....

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Part Number:
2SK3301
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The 2SK3301 is a kind of TOSHIBA field effect transistor which is desiged for the high pseed, high voltage switching applications and switching regulator, DC to DC converter applications.Features of 2SK3301 are:(1)low drain-source ON resistance: RDS(ON) is 15 ohms typ; (2)high forward transfer admittance: Yfs is 0.65 S typ; (3)low leakage current: IDSS is 100 uA max(VDS is 720 V); (4)enhancement-mode: Vth is 2.4 V to 3.4 V(VDS is 10 V and ID is 1 mA).

The absolute maximum ratings of 2SK3301 can be summerized as:(1): drain-source voltage, VDSS is 900 V; (2): drain-gate voltage(RGS is 20 kohms), VDGR is 900 V; (3): gate-source voltage, VGSS is ±30 V; (4): DC drain current, ID is 1 A; (5): drain power dissipation(ta is 25), PD is 20 W; (6): singlw pulse avalanche ennergy, EAS is 140 mJ; (7): avalanche current, IAR is 1 A; (8): repetitive avalanche energy, EAR is 2.0 mJ; (9): channel temperature, Tch is 150; (10): storage temeprature range, tstg is -55 to 150.

The electrical characteristics of 2SK3301 can be summerized as:(1): gate leakage current, IGSS is ±10 A max when VGS is ±30 V and VDS is 0 V; (2): gate-source breakdown voltage, V(BR)GSS is ±30 V min when IG is ±10 A and VDS is 0 V; (3): drain cut-off current, IDSS is 100 max when VDS is 720 A and VGS is 0 V; (4): drain-source breakdown voltage, V(BR)DSS is 900 V min when ID is 10 mA and ID is 1 mA; (5): gate threshold voltage, Vth is 2.4 V min and 3.4 V max when VDS is 10 V and ID is 1 mA; (6): drain-source ON resistance, RDS(ON) is 15 ohm typ and 20 ohm max when VGS is 10 V and ID is 0.5 A; (7): input capacitance, Ciss is 165 pF typ when VDS is 25 V , VGS is 0 V and f is 1 MHz.




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