Features: ·Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)·Gate voltage rating ±30 V·Low on-state resistance RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 5.0 A)·Avalanche capability ratings·Surface mount package availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS...
2SK3299: Features: ·Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)·Gate voltage rating ±30 V·Low on-state resistance RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 5.0 A)·Avalanche capability ...
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Drain to Source Voltage (VGS = 0 V) | VDSS | 600 | V |
Gate to Source Voltage (VDS = 0 V) | VGSS | ±30 | V |
Drain Current (DC) (TC = 25°C) | ID(DC) | ±10 | A |
Drain Current (Pulse) Note1 | ID(pulse) | ±40 | A |
Total Power Dissipation (TA = 25°C) | PT1 | 1.5 | W |
Total Power Dissipation (TA = 25°C) | PT2 | 75 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | -55 to +150 | °C |
Single Avalanche Current Note2 | IAS | 1.0 | A |
Single Avalanche Energy Note2 | EAS | 66.7 | mJ |
The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.