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2SK3299

Features: ·Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)·Gate voltage rating ±30 V·Low on-state resistance RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 5.0 A)·Avalanche capability ratings·Surface mount package availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS...

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SeekIC No. : 004226637 Detail

2SK3299: Features: ·Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)·Gate voltage rating ±30 V·Low on-state resistance RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 5.0 A)·Avalanche capability ...

2SK3299 Data Sheet

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Part Number:
2SK3299
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

·Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
·Gate voltage rating ±30 V
·Low on-state resistance RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 5.0 A)
·Avalanche capability ratings
·Surface mount package available


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±10 A
Drain Current (Pulse) Note1 ID(pulse) ±40 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TA = 25°C) PT2 75 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Single Avalanche Current Note2 IAS 1.0 A
Single Avalanche Energy Note2 EAS 66.7 mJ

Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 150 V, RG = 25 W, VGS = 20 V 0 V


Description

The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.




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