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2SK3298

Features: ` Low gate charge - QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)` Gate voltage rating ±30 V` Low on-state resistance - RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A)` Avalanche capability ratings` Isolated TO-220 packageSpecifications Drain to Source Voltage(VGS = 0 V) VDSS...

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SeekIC No. : 004226636 Detail

2SK3298: Features: ` Low gate charge - QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)` Gate voltage rating ±30 V` Low on-state resistance - RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A)` Avalanche cap...

2SK3298 Data Sheet

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Part Number:
2SK3298
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

` Low gate charge
   - QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
` Gate voltage rating ±30 V
` Low on-state resistance
   - RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A)
` Avalanche capability ratings
` Isolated TO-220 package


Specifications

Drain to Source Voltage(VGS = 0 V) VDSS 600 V
Gate to Source Voltage(VDS = 0 V) VGSS ±30 V
Drain Current (DC)(TC = 25°C) ID(DC) ±7.5 A
Drain Current (Pulse) Note1 ID(pulse) ±30 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 7.5 A
Single Avalanche Energy Note2 EAS 37.5 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3298 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.




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