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2SK3297

Features: •Low gate charge QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)•Gate voltage rating ±30 V•Low on-state resistance R DS(ON) = 1.6 MAX. (VGS = 10 V, ID = 2.5 V)•Avalanche capability ratings•Isolated TO-220 packageSpecificationsDrain to Source Voltage (...

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SeekIC No. : 004226635 Detail

2SK3297: Features: •Low gate charge QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)•Gate voltage rating ±30 V•Low on-state resistance R DS(ON) = 1.6 MAX. (VGS = 10 V, ID = 2.5 V)R...

2SK3297 Data Sheet

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Part Number:
2SK3297
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Low gate charge
  QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
•Gate voltage rating ±30 V
•Low on-state resistance
  R DS(ON) = 1.6 MAX. (VGS = 10 V, ID = 2.5 V)
•Avalanche capability ratings
•Isolated TO-220 package


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS............................ 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ............................±30 V
Drain Current(DC) (TC = 25°C) I D(DC)   ............................±5.0 A
Drain Current(pulse) Note1 I D(pulse).............................. ±20 A
Total Power Dissipation (TA = 25°C) PT1  ............................2.0 W
Total Power Dissipation (TC = 25°C) PT2  ............................ 35 W
Channel Temperature Tch  ...................................150 °C
Storage Temperature Tstg   ..............................−55 to +150 °C
Single Avalanche Current Note2 IAS  ............................... 5.0 A
Single Avalanche Energy Note2 EAS   ..............................16.7 mJ
Notes
1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V


Description

The 2SK3297 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage pplications such as switching power supply, AC adapter.




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