Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)• Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)• Built-in gate protection diode• Surface mount device availableSpecificationsDrain to So...
2SK3296: Features: • 4.5 V drive available• Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)• Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)&...
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The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.