2SK3295 Selling Leads, Price trend, 2SK3295 DataSheet download, circuit diagram from SeekIC.com

Features: 4.5 V drive available Low on-state resistance = 18 m MAX. (VGS=10 V, ID=18 A) Low gate charge = 16 nC TYP. (ID=35 A,VDD=16V, VGS=10V) Built-in gate protection diode Surface mount device availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Volta...

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SeekIC No. : 004226633 Detail

2SK3295: Features: 4.5 V drive available Low on-state resistance = 18 m MAX. (VGS=10 V, ID=18 A) Low gate charge = 16 nC TYP. (ID=35 A,VDD=16V, VGS=10V) Built-in gate protection diode Surface mount device a...

2SK3295 Data Sheet

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Part Number:: 2SK3295
Supply Ability:: 5000

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1~5000

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Upload time: 2025/2/15

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Product Details

Description

Features:

4.5 V drive available
Low on-state resistance = 18 m MAX. (VGS=10 V, ID=18 A)
Low gate charge = 16 nC TYP. (ID=35 A,VDD=16V, VGS=10V)
Built-in gate protection diode
Surface mount device available

Specifications

Drain to Source Voltage (V_GS = 0 V)	V_DSS	20	V
Gate to Source Voltage (V_DS= 0 V)	V_GSS	±20	V
Drain Current (DC) (T_C= 25)	I_D(DC)	±35	A
Drain Current (Pulse)^Note	I_D(pulse)	±140	A
Total Power Dissipation (T_A = 25)	P_T1	1.5	W
Total Power Dissipation (T_C= 25)	P_T2	35	W
Channel Temperature	T_ch	150
Storage Temperature	T_stg	±55 to +150

Description

The 2SK3295 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

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2SK3295

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