Features: • Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)• Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)• Avalanche capability rated• Built-in gate protection diode• Surface mount device avail...
2SK3294: Features: • Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)• Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)•...
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• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
• Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
Parameter | Symbol | Ratings | Unit |
---|---|---|---|
Drain to Source Voltage (VGS = 0 V) | VCBO | 250 | V |
Gate to source voltage(VDS = 0 V) | VCEO | ±30 | V |
Drain current(DC) (TC = 25) | ID(DC) | ±20 | A |
Drain Current (Pulse) Note1 | ID(pulse) | ±60 | A |
Total Power Dissipation (TC = 25) | PT1 | 100 | W |
Total Power Dissipation (TA = 25) | PT2 | 1.5 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55 to +1500 | |
Single Avalanche Current Note2 | IAS | 20 | A |
Single Avalanche Energy Note2 | EAS | 150 | mJ |
The 2SK3294 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver