Features: ·4.5 V drive available·Low on-state resistance·RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A)·Low gate charge·QG = 30 nC TYP. (ID= 35 A, VDD = 16 V, VGS = 10 V)·Built-in gate protection diode·Surface mount device availableSpecifications Parameter Symbol Rating Unit Drain to sourc...
2SK3269: Features: ·4.5 V drive available·Low on-state resistance·RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A)·Low gate charge·QG = 30 nC TYP. (ID= 35 A, VDD = 16 V, VGS = 10 V)·Built-in gate protection diode...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 100 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | ±35 | A |
Drain current | Idp * | ±140 | A |
Power dissipation Ta=25 Tc=25 |
PD |
1.5 |
W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |