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2SK3235

Features: · Low on-resistance: RDS(on) = 0.3 W typ.· Low leakage current: IDSS = 1 mA max (at VDS = 500 V)· High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)· Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)· Avalanche ratingsSpecifications ...

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SeekIC No. : 004226612 Detail

2SK3235: Features: · Low on-resistance: RDS(on) = 0.3 W typ.· Low leakage current: IDSS = 1 mA max (at VDS = 500 V)· High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)· Low gate ch...

2SK3235 Data Sheet

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Part Number:
2SK3235
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Low on-resistance: RDS(on) = 0.3 W typ.
·  Low leakage current: IDSS = 1 mA max (at VDS = 500 V)
·  High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)
·  Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)
·  Avalanche ratings


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
15
A
Drain peak current
ID (pulse) Note1
60
A
Body-drain diode reverse drain
current
IDR
15
A
Body-drain diode reverse drain peak current
IDR (pulse)Note1
60
A
Avalanche current
IAP Note3

15
A
Channel dissipation
PchNote2
150
W
Channel to case Thermal Impedance
q ch-c
0.833
°CW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes: 1. PW  10 ms, duty cycle   1%
            2. Value at Tc = 25°C
            3. Tch  150°C


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