2SK3230-T1-A

The 2SK3230-T1-A is designed as one kind of N-channel silicon junction field effect transistor device that has three points of features such as (1)Compact package;(2)High forward transfer admittance: 1000 S TYP. (IDSS = 100 A) and 1600 S TYP. (IDSS = 200 A);(3)Includes diode and high resistance at G - S.

The absolute maximum ratings of the 2SK3230-T1-A can be summarized as:(1)Drain to Source Voltage: 20 V;(2)Gate to Drain Voltage:20 V;(3)Drain Current: 10 mA;(4)Gate Current: 10 mA;(5)Total Power Dissipation: 200 mW;(6)Junction Temperature: 125 °C;(7)Storage Temperature:55 to +125 °C.

The electrical characteristics of 2SK3230-T1-A can be summarized as:(1)Zero Gate Voltage Drain Cut-off Current: 40 to 600 A;(2)Gate Cut-off Voltage: -0.1 to -1.0 V;(3)Forward Transfer Admittance: 350 S;(4)Forward Transfer Admittance: 350 S;(5)Input Capacitance: 7.0 to 8.0 pF;(6)Noise Voltage: 1.8 to 3.0 V. If you want to know more information such as the electrical characteristics about 2SK3230-T1-A, please download the datasheet in www.seekic.com or www.chinaicmart.com.