Features: ` Low On-State Resistance - RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A) - RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 790 pF TYP.` Built-in Gate Protection Diode` TO-251/TO-252 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage...
2SK3224: Features: ` Low On-State Resistance - RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A) - RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 790 pF TYP.` Built-in Gate Protection Diode` TO-...
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Drain to Source Voltage | VDSS | 60 | V |
Gate to Source Voltage | VGSS(AC) | ±20 | V |
Gate to Source Voltage | VGSS(DC) | +20, -10 | V |
Drain Current (DC) | ID(DC) | ±20 | A |
Drain Current (Pulse) Note1 | ID(pulse) | ±70 | A |
Total Power Dissipation (TA = 25°C) | PT | 25 | W |
Total Power Dissipation (TC= 25°C) | PT | 1.0 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Single Avalanche Current Note2 | IAS | 10 | A |
Single Avalanche Energy Note2 | EAS | 10 | mJ |
Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V