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2SK3224

Features: ` Low On-State Resistance - RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A) - RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 790 pF TYP.` Built-in Gate Protection Diode` TO-251/TO-252 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage...

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SeekIC No. : 004226608 Detail

2SK3224: Features: ` Low On-State Resistance - RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A) - RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A)` Low Ciss : Ciss = 790 pF TYP.` Built-in Gate Protection Diode` TO-...

2SK3224 Data Sheet

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Part Number:
2SK3224
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low On-State Resistance
  - RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A)
  - RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A)
` Low Ciss : Ciss = 790 pF TYP.
` Built-in Gate Protection Diode
` TO-251/TO-252 package


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, -10 V
Drain Current (DC) ID(DC) ±20 A
Drain Current (Pulse) Note1 ID(pulse) ±70 A
Total Power Dissipation (TA = 25°C) PT 25 W
Total Power Dissipation (TC= 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 10 A
Single Avalanche Energy Note2 EAS 10 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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