Features: ` Low on-resistance RDS =60m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±20 V Drain current ID 25 A Drain peak current ID...
2SK3211(S): Features: ` Low on-resistance RDS =60m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS ...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 200 | V |
Gate to source voltage | VGSS | ±20 |
V |
Drain current | ID | 25 | A |
Drain peak current | ID(pulse)Note1 | 100 | A |
Body-drain diode reverse drain current | IDR | 25 | A |
Avalanche current | IAPNote3 |
25 | A |
Avalanche energy | EARNote3 |
41 | mJ |
Channel dissipation | PchNote2 | 100 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |