2SK3211-90STR-E

The 2SK3211-90STR-E is one member of the 2SK3211 family that designed as the Silicon N channel MOSFET with three points of features:(1)4 V gate drive device can be driven from 5 V source;(2)high speed switching;(3)low on-resistance.

The absolute maximum ratings of the 2SK3211-90STR-E can be summarized as:(1)drain to source voltage:200 V;(2)gate to source voltage:±20 V;(3)drain current:25 A;(4)drain peak current:100 A;(5)body-drain diode reverse drain current:25 A;(6)avalanche current:25 A;(7)avalanche energy:41 mJ;(8)channel dissipat-ion:100 W;(9)channel temperature:150 °C;(10)storage temperature:-55 to +150 °C.

2SK3211-90STR-E is not designed to be radiation resistant.Design your application so that the product is used within the ranges guaranteed by Hitachi particu-larly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges.If you want to know more information such as the electrical characteristics about the 2SK3211-90STR-E,please download the datasheet in www.seekic.com or www.chinaicmart.com .