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2SK3210(L)

Features: ` Low on-resistance RDS =35m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID...

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2SK3210(L): Features: ` Low on-resistance RDS =35m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS ...

2SK3210(L) Data Sheet

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Part Number:
2SK3210(L)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

`  Low on-resistance RDS =35m typ.
`  High speed switching
`  4V gate drive device can be driven from 5V source


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 150 V
Gate to source voltage VGSS ±20
 V
Drain current ID 30 A
Drain peak current ID(pulse)Note1 120 A
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAPNote3
 30 A
Avalanche energy EARNote3
 67 mJ
Channel dissipation PchNote2 100 W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25
3. Value at Tch = 25, Rg 50


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