Features: ` Low on-resistance RDS =35m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID...
2SK3210(L): Features: ` Low on-resistance RDS =35m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 150 | V |
Gate to source voltage | VGSS | ±20 |
V |
Drain current | ID | 30 | A |
Drain peak current | ID(pulse)Note1 | 120 | A |
Body-drain diode reverse drain current | IDR | 30 | A |
Avalanche current | IAPNote3 |
30 | A |
Avalanche energy | EARNote3 |
67 | mJ |
Channel dissipation | PchNote2 | 100 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |