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2SK3204

Features: ` Low on-state resistance : - RDS(on)1 = 34 m (MAX.) (VGS = 10 V, ID = 8 A) - RDS(on)2 = 50 m (MAX.) (VGS = 4 V, ID = 8 A)` Low Ciss : Ciss = 940 pF (TYP.)` Built-in gate protection diode.Specifications Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS(AC) ±20 ...

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2SK3204: Features: ` Low on-state resistance : - RDS(on)1 = 34 m (MAX.) (VGS = 10 V, ID = 8 A) - RDS(on)2 = 50 m (MAX.) (VGS = 4 V, ID = 8 A)` Low Ciss : Ciss = 940 pF (TYP.)` Built-in gate protection diode....

2SK3204 Data Sheet

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Part Number:
2SK3204
Supply Ability:
5000

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Product Details

Description



Features:

` Low on-state resistance :
  - RDS(on)1 = 34 m (MAX.) (VGS = 10 V, ID = 8 A)
  - RDS(on)2 = 50 m (MAX.) (VGS = 4 V, ID = 8 A)
` Low Ciss : Ciss = 940 pF (TYP.)
` Built-in gate protection diode.


Specifications

Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, -10 V
Drain Current (DC)(TC = 25°C) ID(DC) ±15 A
Drain Current (Pulse) Note1 ID(pulse) ±45 A
Total Power Dissipation (TA = 25°C) PT2 1.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 15 A
Single Avalanche Energy Note2 EAS 22.5 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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