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2SK3177_1377725

Features: • Low on-resistance RDS = 90 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±20 V Drain current I D ...

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SeekIC No. : 004226591 Detail

2SK3177_1377725: Features: • Low on-resistance RDS = 90 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit D...

2SK3177_1377725 Data Sheet

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Part Number:
2SK3177_1377725
Supply Ability:
5000

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Upload time: 2024/11/13

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Product Details

Description



Features:

•  Low on-resistance
    RDS = 90 mΩ typ.
•  High speed switching
•  4 V gate drive device can be driven from 5 V source


Specifications

Item Symbol Rating Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±20 V
Drain current I D 15 A
Drain peak current I D(puls)Note1 60 A
Body-drain diode reverse drain current IDR 15 A
Avalanche current IAP Note3 15 A
Avalanche energy EAR Note3 15 mJ
Channel dissipation Pch Note2 35 W
Channel temperature T ch 150
Storage temperature T stg -55 to +150
Note: 1. PW 10 µs, duty cycle 1%
          2. Value at Tc = 25°C
          3. Value at Tch = 25°C, Rg 50 Ω


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