MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
2SK3176(F): MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A |
Resistance Drain-Source RDS (on) : | 0.052 Ohms | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | TO-3P |
Packaging : | Bulk |
Technical/Catalog Information | 2SK3176(F) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 5400pF @ 10V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 125nC @ 10V |
Package / Case | 2-16C1B (TO-247 N) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SK3176 F 2SK3176F |