2SK3176

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 125nC @ 10V
Power - Max: 150W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 5400pF @ 10V


Description

The 2SK3176 is a kind of field effect transistor. It is widely used in high speed, high voltage switching applications and switching regulator, DC-DC converter and motor drive applications.

There are some features of 2SK3176 as follows: (1)low drain-source ON resistance: RDS(ON)=38 m (typ.); (2)high forward transfer admittance: |Yfs|=28 S (typ.); (3)low leakage current: IDSS=100A (max.) (VDS=200 V); (4)enhancement mode: Vth=1.5 to 3.5 V (VDS=10 V, ID=1 mA).

The following is the absolute maximum ratings of 2SK3176 (Ta=25): (1)drain-source voltage, VDSS: 200 V; (2)drain-gate voltage (RGS=20 k), VDGR: 200 V; (3)gate-source voltage, VGSS: ±20 V; (4)drain current DC, ID: 30 A; (5)drain current pulse, IDP: 120 A; (6)drain power dissipation (Tc=25), PD: 150 W; (7)single pulse avalanche energty, EAS: 925 mJ; (8)avalanche current, IAR: 30 A; (9)repetitive avalanche energy, EAR: 15 mJ; (10)channel temperature, Tch: 150; (11)storage temperature range, Tstg: -55 to 150.

What comes next is the electrical characteristics of 2SK3176 (Ta=25): (1)thermal resistance, channel to case, Rth(ch-c): 0.833/W; (2)thermal resistance, channel to ambient, Rth(ch-a): 50.0/W.