Features: • Low on-resistanceRDS = 60 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±20 V Drain current I D ...
2SK3162_1377722: Features: • Low on-resistanceRDS = 60 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Dr...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 200 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | I D | 20 | A |
Drain peak current | I D(puls)Note1 | 80 | A |
Body to drain diode reverse drain current | IDR | 20 | A |
Avalanche current | IAP Note3 | 20 | A |
Avalanche energy | EAR Note3 | 26 | mJ |
Channel dissipation | Pch Note2 | 35 | W |
Channel temperature | T ch | 150 | |
Storage temperature | T stg | -55 to +150 |