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2SK3162_1377722

Features: • Low on-resistanceRDS = 60 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±20 V Drain current I D ...

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SeekIC No. : 004226587 Detail

2SK3162_1377722: Features: • Low on-resistanceRDS = 60 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Dr...

2SK3162_1377722 Data Sheet

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Part Number:
2SK3162_1377722
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/14

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Product Details

Description



Features:

•  Low on-resistance
    RDS = 60 mΩ typ.
•  High speed switching
•  4 V gate drive device can be driven from 5 V source


Specifications

Item Symbol Rating Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±20 V
Drain current I D 20 A
Drain peak current I D(puls)Note1 80 A
Body to drain diode reverse drain current IDR 20 A
Avalanche current IAP Note3 20 A
Avalanche energy EAR Note3 26 mJ
Channel dissipation Pch Note2 35 W
Channel temperature T ch 150
Storage temperature T stg -55 to +150
Note: 1. PW 10 µs, duty cycle 1%
          2. Value at Tc = 25°C
          3. Value at Tch = 25°C, Rg 50 Ω


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