2SK3157

Features: ` Low on-resistance RDS = 50 m typ.` High speed switching` 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID ...

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SeekIC No. : 004226581 Detail

2SK3157: Features: ` Low on-resistance RDS = 50 m typ.` High speed switching` 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source v...

floor Price/Ceiling Price

Part Number:
2SK3157
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Description



Features:

`  Low on-resistance RDS = 50 m typ.
`  High speed switching
`  4 V gate drive device can be driven from 5 V source



Specifications

Item

Symbol
Ratings
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
20
A
Drain peak current
ID(pulse)
80
A
Body-drain diode reverse drain current
IDRNote1
20
A
Avalanche current
IAPNote3
20
A
Avalanche energy
EARNote3
30
mJ
Channel dissipation
Pch Note2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50




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