2SK3132

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 50A
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 250W
Gate Charge (Qg) @ Vgs: 280nC @ 10V
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 11000pF @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 1mA
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V


Application

·Low drain−source ON resistance : R_DS (ON) = 0.07 Ω (typ.)
·High forward transfer admittance : |Yfs| = 33 S (typ.)
·Low leakage current : I_DSS = 100 µA (max) (VDS = 500 V)
·Enhancement−mode : V_th = 2.4~3.4 V (V_DS = 10 V, I_D = 1 mA)


Specifications

Item	SYMBOL	RATINGS	UNIT
Drain-source voltage	V DSS	500	V
Drain-gate voltage (RGS = 20 k)	VDGR	500	V
Gate-source voltage	VGSS	±30	V
Drain- Current (DC) (Note 1)	I D	50	A
Drain- Current (puls) (Note 1)	I DP	200	A
Drain power dissipation (Tc = 25°C)	PD	250	W
Single pulse avalanche energy (Note 2)	EAS	525	W
Avalanche current	IAR	50	mJ
Repetitive avalanche energy (Note 3)	EAR	25	MJ
Channel temperature	Tch	150	°C
Storage temperature range	Tstg	-55 ~ +150	°C