Features: · Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)· High forward transfer admittance: |Yfs| = 60 S (typ.)· Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)· Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)Specifications Item SYMBOL RATINGS ...
2SK3125: Features: · Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)· High forward transfer admittance: |Yfs| = 60 S (typ.)· Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)· Enhanc...
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Item |
SYMBOL |
RATINGS |
UNIT |
Drain-source voltage |
V DSS |
30 |
V |
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V |
Gate-source voltage |
VGSS |
±20 |
V |
Drain- Current (DC) (Note 1) |
I D |
70 |
A |
Drain- Current (puls) (Note 1) |
I DP |
210 |
A |
Drain power dissipation (Tc = 25°C) |
PD |
150 |
W |
Single pulse avalanche energy (Note 2) |
EAS |
955 |
W |
Avalanche current |
IAR |
70 |
mJ |
Repetitive avalanche energy (Note 3) |
EAR |
15 |
MJ |
Channel temperature |
Tch |
150 |
°C |
Storage temperature range |
Tstg |
-55 ~ +150 |
°C |