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2SK3116-S_1377682

Features: •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)•Gate voltage rating ±30 V•Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A)•Avalanche capability ratingsSpecificationsDrain to Source Voltage (VGS = 0 V)VDSS 600 VGate to So...

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2SK3116-S_1377682: Features: •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)•Gate voltage rating ±30 V•Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A)R...

2SK3116-S_1377682 Data Sheet

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Part Number:
2SK3116-S_1377682
Supply Ability:
5000

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Product Details

Description



Features:

•Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
•Gate voltage rating ±30 V
•Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A)
•Avalanche capability ratings


Specifications

Drain to Source Voltage (VGS = 0 V)                   VDSS            600             V
Gate to Source Voltage (VDS = 0 V)                    VGSS            ±30            V
Drain Current (DC)                                              ID(DC)         ±7.5            A
Drain Current (pulse) Note1                                ID(pulse)      ±30            A
Total Power Dissipation (TA = 25°C)                 PT1              1.5              W
Total Power Dissipation (TC = 25°C)                 PT2              70               W
Channel Temperature                                        Tch               150            °C
Storage Temperature                                        Tstg           −55 to +150 °C
Single Avalanche Current Note2                         IAS               7.5                A
Single Avalanche Energy Note2                          EAS              37.5              mJ
Diode Recovery dv/dt Note3                              dv/dt            3.5                V/ns
Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V
          3. IF 3.0 A, Vclamp = 600 V, di/dt 100 A/ s, TA = 25°C


Description

The 2SK3116-S_1377682 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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